FDMC012N03 Datasheet Text
MOSFET
- N-Channel, POWERTRENCH)
30 V, 1.23 mW
FDMC012N03
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Max RDS(on) = 1.23 mW at VGS = 10 V, ID = 35 A
- Max RDS(on) = 1.46 mW at VGS = 4.5 V, ID = 32 A
- High Performance Technology for Extremely Low RDS(on)
- Termination is Lead- Free
- This Device is Pb- Free, Halide Free and RoHS pliant
Applications
- DC- DC...