FDMC2523P Datasheet Text
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FDMC2523P P-Channel QFET®
September 2006
FDMC2523P P-Channel QFET®
-150V, -3A, 1.5:
Features
- Low Crss ( typical 10pF)
- Fast Switching
- Low gate charge ( typical 6.2 nC )
- Improved dv / dt capability
- RoHS pliant tm
General Description
These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Application
- Active Clamp Switch
Bottom
6 7 8 D D D D
Top
5 6
2 1 S S S G
5
4 3 2 1
7 8
4
3
MLP 3.3x3.3
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG TL dv/dt Power Dissipation Parameter Drain to Source Voltage Gate to Source Voltage Drain Current
- Continuous (Tc=25°C)
- Continuous (Tc=100°C)...
