FDMC2523P Datasheet Text
MOSFET
- P-Channel, QFET
-150 V, -3 A, 1.5 W
FDMC2523P
General Description These P- Channel MOSFET enhancement mode power field effect transistors are produced using onsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC- DC converters, and DC motor control.
Features
- Max RDS(on) = 1.5 W at VGS =
- 10 V, ID =
- 1.5 A
- Low Crss (Typical 10 pF)
- Fast Switching
- Low Gate Charge (Typical 6.2 nC)
- Improved dv / dt Capability
- This Device is Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Applications
- Active Clamp Switch
DATA SHEET .onsemi.
Pin 1 SS S G
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P CASE 511DH
MARKING DIAGRAM
ZXYKK 2523P
Z XY KK 2523P
= Assembly Plant Code = Date Code (Year &Week) = Lot Traceability Code = Specific Device Code
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