Download FDMC2512SDC Datasheet PDF
FDMC2512SDC page 2
Page 2
FDMC2512SDC page 3
Page 3

FDMC2512SDC Datasheet Text

FDMC2512SDC N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM July 2015 FDMC2512SDC N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM 25 V, 40 A, 2.0 mΩ Features - Dual CoolTM Top Side Cooling PQFN package - Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 27 A - Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 22 A - High performance technology for extremely low rDS(on) - SyncFET Schottky Body Diode - RoHS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications - Synchronous Rectifier for DC/DC Converters - Tele Secondary Side Rectification - High End Server/Workstation Vcore Low Side Pin 1 G S S S D5 D6 4G 3S D D D D Top Dual CoolTM 33 Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted...