FDMC2610 Datasheet | Fairchild Semiconductor

.. FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ Features General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. - Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A - Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A - Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm - RoHS pliant tm Application - DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 7 G S S S 4 3 2 1 4 3 2 1 8...