FDMC2610 Datasheet Text
MOSFET
- N-Channel, UltraFET Trench
200 V, 9.5 A, 200 mW
FDMC2610
General Description This N- Channel MOSFET is a rugged gate version of onsemi‘s advanced POWERTRENCH® process. It has been optimized for power management applications.
Features
- Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A
- Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A
- Low Profile
- 1 mm Max in a Power 33
- Pb- Free, Halide Free and RoHS pliant
Applications
- DC- DC Conversion
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to Source Voltage
200
V
VGS Gate to Source Voltage
±20
V
ID
Drain Current:
A
Continuous (Silicon limited) TC = 25°C
9.5
Continuous (Note 1a)
TA = 25°C...
