FDMC0310AS Datasheet Text
SyncFETt
- N-Channel, POWERTRENCH)
30 V, 21 A, 4.4 mW
FDMC0310AS, FDMC0310AS-F127
General Description The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.
Features
- Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A
- Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.5 A
- Advanced Package and Silicon bination for Low rDS(on) and
High Efficiency
- SyncFET Schottky Body Diode
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb- Free and are RoHS pliant
Applications
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore/GPU Low Side Switch
- Networking Point of Load Low Side Switch
- Tele Secondary Side Rectification
DATA SHEET .onsemi.
VDS MAX 30 V rDS(on) MAX 4.4 mW @ 10 V 5.2 mW @ 4.5 V
ID MAX 21 A
Pin 1 SSSG
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P (MLP SAWN) CASE 511DH
Pin 1
SSSG
D DD D...
