CGH40090PP hemt equivalent, rf power gan hemt.
* Up to 2.5 GHz Operation
* 16 dB Small Signal Gain at 2.0 GHz
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100 W Typical PSAT 55% Efficiency at PSAT 28 V Operation
Large Signal Models.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and c.
Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs of.
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