CGH40045 Datasheet (PDF) Download
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CGH40045

Description

The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 4 GHz Operation
  • 16 dB Small Signal Gain at 2.0 GHz
  • 12 dB Small Signal Gain at 4.0 GHz
  • 55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation