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CGH40045 Datasheet, MACOM

CGH40045 hemt equivalent, dc-4ghz rf power gan hemt.

CGH40045 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.24MB)

CGH40045 Datasheet
CGH40045
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.24MB)

CGH40045 Datasheet

Features and benefits


* Up to 4 GHz Operation
* 16 dB Small Signal Gain at 2.0 GHz
* 12 dB Small Signal Gain at 4.0 GHz
*
*
* 55 W Typical PSAT 55% Efficiency at P.

Application

GaN HEMT soffer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and com.

Description

The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMT soffer high.

Image gallery

CGH40045 Page 1 CGH40045 Page 2 CGH40045 Page 3

TAGS

CGH40045
DC-4GHz
Power
GaN
HEMT
MACOM

Manufacturer


MACOM

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