CGH40045 hemt equivalent, dc-4ghz rf power gan hemt.
* Up to 4 GHz Operation
* 16 dB Small Signal Gain at 2.0 GHz
* 12 dB Small Signal Gain at 4.0 GHz
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55 W Typical PSAT 55% Efficiency at P.
GaN HEMT soffer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and com.
The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMT soffer high.
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