Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Thermal Resistance, Junction to
Case 1
VDSS
VGS
TSTG
TJ
IGMAX
TS
RθJC
www.DataNShoeteet:4U.com
1 Measured for the CGH40045F at 43W PDISS.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics2
Symbol
Min.
Typ.
Gate Threshold Voltage
VGS(th)
-3.0
-2.5
Gate Quiescent Voltage
VGS(Q)
–
-2.3
Saturated Drain Current3
IDS 9.6 10.8
Drain-Source Breakdown Voltage
VBR
84
100
Case Operating Temperature4
TC -10 –
Screw Torque
T––
RF Characteristics (TC = 25˚C, F0 = 3.6 GHz unless otherwise noted)
Small Signal Gain
GSS
11.0
12.0
Power Output at 3 dB
Compression
P3dB
45
55
Drain Efficiency1
η 50 55
Output Mismatch Stress
VSWR
–
TBD
Dynamic Characteristics
Input Capacitance
CGS – 19.3
Output Capacitance
CDS – 4.6
Feedback Capacitance
CGD – 1.7
Notes:
1 Drain Efficiency = POUT / PDC
2 Measured on wafer prior to packaging.
3 Scaled from PCM data.
4 See also, the Power Dissipation De-rating Curve on Page 5.
Rating
84
-10, +2
-55, +150
175
15
245
2.7
Units
Volts
Volts
˚C
˚C
mA
˚C
˚C/W
Max.
-1.8
–
–
–
+60
80
–
–
–
–
–
–
–
Units
Conditions
VDC
VDC
A
VDC
˚C
in-oz
VDS = 10 V, ID = 14.4 mA
VDS = 28 V, ID = 800 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 14.4 mA
PDISS = 43 W
Reference 440193 Rev 1
dB VDD = 28 V, IDQ = 800 mA
W VDD = 28 V, IDQ = 800 mA
% VDD = 28 V, IDQ = 800 mA, POUT = P3dB
No damage at all phase angles,
Y
VPODUDT
=
=
28
45
VW, ICDQW=
800
mA,
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH40045 Rev 1.1 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
