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Cree

CGH40045 Datasheet Preview

CGH40045 Datasheet

GaN HEMT

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PRELIMINARY
CGH40045
45 W, RF Power GaN HEMT
Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40045, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
www.DataSheetth4Ue.cCoGmH40045 ideal for linear and compressed amplifier circuits.
The transistor is available in a flange package.
PackagePNTy: pCeGs:H4404004159F3
FEATURES
APPLICATIONS
• Up to 4 GHz Operation
• >16 dB Small Signal Gain at 2.0 GHz
• 12 dB Small Signal Gain at 4.0 GHz
• 55 W Typical P3dB
55 % Efficiency at P3dB
• 28 V Operation
• 2-Way Private Radio
Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
www.cree.com/wireless





Cree

CGH40045 Datasheet Preview

CGH40045 Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Thermal Resistance, Junction to
Case 1
VDSS
VGS
TSTG
TJ
IGMAX
TS
RθJC
www.DataNShoeteet:4U.com
1 Measured for the CGH40045F at 43W PDISS.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics2
Symbol
Min.
Typ.
Gate Threshold Voltage
VGS(th)
-3.0
-2.5
Gate Quiescent Voltage
VGS(Q)
-2.3
Saturated Drain Current3
IDS 9.6 10.8
Drain-Source Breakdown Voltage
VBR
84
100
Case Operating Temperature4
TC -10 –
Screw Torque
T––
RF Characteristics (TC = 25˚C, F0 = 3.6 GHz unless otherwise noted)
Small Signal Gain
GSS
11.0
12.0
Power Output at 3 dB
Compression
P3dB
45
55
Drain Efficiency1
η 50 55
Output Mismatch Stress
VSWR
TBD
Dynamic Characteristics
Input Capacitance
CGS 19.3
Output Capacitance
CDS – 4.6
Feedback Capacitance
CGD – 1.7
Notes:
1 Drain Efficiency = POUT / PDC
2 Measured on wafer prior to packaging.
3 Scaled from PCM data.
4 See also, the Power Dissipation De-rating Curve on Page 5.
Rating
84
-10, +2
-55, +150
175
15
245
2.7
Units
Volts
Volts
˚C
˚C
mA
˚C
˚C/W
Max.
-1.8
+60
80
Units
Conditions
VDC
VDC
A
VDC
˚C
in-oz
VDS = 10 V, ID = 14.4 mA
VDS = 28 V, ID = 800 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 14.4 mA
PDISS = 43 W
Reference 440193 Rev 1
dB VDD = 28 V, IDQ = 800 mA
W VDD = 28 V, IDQ = 800 mA
% VDD = 28 V, IDQ = 800 mA, POUT = P3dB
No damage at all phase angles,
Y
VPODUDT
=
=
28
45
VW, ICDQW=
800
mA,
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
 CGH40045 Rev 1.1 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless


Part Number CGH40045
Description GaN HEMT
Maker Cree
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