CGH40006P Datasheet - Cree

CGH40006P RF Power GaN HEMT

RES, AIN, 0505, 470 Ohms (≤5% tolerance) RES, AIN, 0505, 10 Ohms (≤5% tolerance) RES, AIN, 0505, 150 Ohms (≤5% tolerance) CAP, 2.0 pF +/-0.1 pF, 0603, ATC 600S CAP, 4.7 pF +/-0.1 pF, 0603, ATC 600S CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S CAP, 8.2 pF +/-0.25, 0603, ATC 600S CAP, 470 pF +/-5%, 0603, 100.

CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package. PackaPgNe’sT:yCpGesH: .

CGH40006P Features

* Up to 6 GHz Operation

* 13 dB Small Signal Gain at 2.0 GHz

* 11 dB Small Signal Gain at 6.0 GHz

* 8 W typical at PIN = 32 dBm

* 65 % Efficiency at PIN = 32 dBm

* 28 V Operation APPLICATIONS

* 2-Way Private Radio

* Broadband A

CGH40006P-Cree.pdf

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Datasheet Details

Part number:

CGH40006P

Manufacturer:

Cree

File Size:

1.60 MB

Description:

Rf power gan hemt.

CGH40006P Distributor

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CGH40006P CGH40006P Power GaN HEMT Cree