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CGH40006P - RF Power GaN HEMT

General Description

RES, AIN, 0505, 470 Ohms (≤5% tolerance) RES, AIN, 0505, 10 Ohms (≤5% tolerance) RES, AIN, 0505, 150 Ohms (≤5% tolerance) CAP, 2.0 pF +/-0.1 pF, 0603, ATC 600S CAP, 4.7 pF +/-0.1 pF, 0603, ATC 600S CAP, 3.6 pF +/-0.1 pF, 0603, ATC 600S CAP, 8.2 pF +/-0.25, 0603, ATC 600S CAP, 470 pF +/-5%, 0603, 100

Key Features

  • Up to 6 GHz Operation.
  • 13 dB Small Signal Gain at 2.0 GHz.
  • 11 dB Small Signal Gain at 6.0 GHz.
  • 8 W typical at PIN = 32 dBm.
  • 65 % Efficiency at PIN = 32 dBm.
  • 28 V Operation.

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📁 Similar Datasheet

Part Number Description Manufacturer
CGH40006P RF Power GaN HEMT MACOM
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Other Datasheets by Cree (now Wolfspeed)

Part Number Description
CGH40006S RF Power GaN HEMT
CGH40010 RF Power GaN HEMT
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CGH40035F RF Power GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package. PackaPgNe’sT:yCpGesH: 4404000160P9 FEATURES • Up to 6 GHz Operation • 13 dB Small Signal Gain at 2.0 GHz • 11 dB Small Signal Gain at 6.