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Cree

CGH40006P Datasheet Preview

CGH40006P Datasheet

RF Power GaN HEMT

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CGH40006P
6 W, RF Power GaN HEMT
Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications. GaN
HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the
CGH40006P ideal for linear and compressed amplifier circuits. The transistor is
available in a solder-down, pill package.
PackaPgNe’sT:yCpGesH: 4404000160P9
FEATURES
Up to 6 GHz Operation
13 dB Small Signal Gain at 2.0 GHz
11 dB Small Signal Gain at 6.0 GHz
8 W typical at PIN = 32 dBm
• 65 % Efficiency at PIN = 32 dBm
28 V Operation
APPLICATIONS
2-Way Private Radio
• Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
1




Cree

CGH40006P Datasheet Preview

CGH40006P Datasheet

RF Power GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
VDSS
84
Gate-to-Source Voltage
VGS -10, +2
Storage Temperature
TSTG -65, +150
Operating Junction Temperature
TJ 225
Maximum Forward Gate Current
IGMAX
2.1
Maximum Drain Current1
IDMAX
0.75
Soldering Temperature2
TS 245
Thermal Resistance, Junction to Case3
RθJC
9.5
Case Operating Temperature3
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH40006P at PDISS = 8 W.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current
IDS 1.7
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics2 (TC = 25˚C, F0 = 2.0 GHz unless otherwise noted)
Small Signal Gain
GSS 11.5
Power Output at PIN = 32 dBm
POUT
7.0
Drain Efficiency3
η 53
Output Mismatch Stress
VSWR
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging.
2 Measured in CGH40006P-AMP.
3 Drain Efficiency = POUT / PDC
CGS
CDS
CGD
Typ.
-3.0
-2.7
2.1
13
9
65
3.0
1.1
0.1
Max.
-2.3
10 : 1
Units
Volts
Volts
˚C
˚C
mA
A
˚C
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Units
Conditions
VDC VDS = 10 V, ID = 2.1 mA
VDC VDS = 28 V, ID = 100 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 2.1 mA
dB VDD = 28 V, IDQ = 100 mA
W VDD = 28 V, IDQ = 100 mA
% VDD = 28 V, IDQ = 100 mA, PIN = 32 dBm
No damage at all phase angles,
Y VDD = 28 V, IDQ = 100 mA,
PIN = 32 dBm
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGH40006P
Description RF Power GaN HEMT
Maker Cree
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