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Cree

CGH40006S Datasheet Preview

CGH40006S Datasheet

RF Power GaN HEMT

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CGH40006S
6 W, RF Power GaN HEMT, Plastic
Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs
offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S
ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm
x 3mm, surface mount, quad-flat-no-lead (QFN) package.
PackaPgNe’sT:yCpeGsH: 4404000260S3
FEATURES
• Up to 6 GHz Operation
13 dB Small Signal Gain at 2.0 GHz
11 dB Small Signal Gain at 6.0 GHz
• 8 W typical at PIN = 32 dBm
65 % Efficiency at PIN = 32 dBm
• 28 V Operation
3mm x 3mm Package
APPLICATIONS
2-Way Private Radio
Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/wireless
1




Cree

CGH40006S Datasheet Preview

CGH40006S Datasheet

RF Power GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
84
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG -65, +150
˚C
Operating Junction Temperature
TJ 175 ˚C
Maximum Forward Gate Current
IGMAX
2.1
mA 25˚C
Maximum Drain Current1
IDMAX
0.75
A
25˚C
Soldering Temperature2
TS 260 ˚C
Thermal Resistance, Junction to Case3,4
RθJC
10.1
˚C/W
85˚C
Case Operating Temperature3,4
TC -40, +150 ˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH40006S at PDISS = 8 W.
4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal
resistance. The RTH for Cree’s demonstration amplifier, CGH40006S-AMP1, with 13 (Ø20 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is
5.1°C. The total Rth from the heat sink to the junction is 10.1°C +5.1°C = 15.2 °C/W.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC VDS = 10 V, ID = 2.1 mA
Gate Quiescent Voltage
VGS(Q)
-2.7
VDC VDS = 28 V, ID = 100 mA
Saturated Drain Current
IDS 1.7 2.1 –
A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics2 (TC = 25˚C, F0 = 5.8 GHz unless otherwise noted)
Small Signal Gain
GSS 10
11.8
VDC VGS = -8 V, ID = 2.1 mA
dB VDD = 28 V, IDQ = 100 mA
Power Output at PIN = 30 dBm
POUT
5
6.9 –
W VDD = 28 V, IDQ = 100 mA
Drain Efficiency3
Output Mismatch Stress
Dynamic Characteristics
η
VSWR
40
53
% VDD = 28 V, IDQ = 100 mA, PIN = 30 dBm
No damage at all phase angles,
10 : 1 Y VDD = 28 V, IDQ = 100 mA,
PIN = 32 dBm
Input Capacitance
CGS – 2.7 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS – 0.8 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD – 0.1 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in Cree’s narrow band production test fixture AD-000291. This fixture is designed for high volume test at 5.8 GHz and may not show the full
capability of the device due to source inductance and thermal performance. The demonstration amplifier, CGH40006S-AMP1, is a better indicator of the
true RF performance of the device.
3 Drain Efficiency = POUT / PDC
Copyright © 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH40006S Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGH40006S
Description RF Power GaN HEMT
Maker Cree
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CGH40006S Datasheet PDF






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