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CGH40006P Datasheet, MACOM

CGH40006P hemt equivalent, rf power gan hemt.

CGH40006P Avg. rating / M : 1.0 rating-11

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CGH40006P Datasheet

Features and benefits


* Up to 6 GHz Operation
* 13 dB Small Signal Gain at 2.0 GHz
* 11 dB Small Signal Gain at 6.0 GHz
* 8 W typical at PIN = 32 dBm
* 28 V Operation Appl.

Application

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and co.

Description

The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer h.

Image gallery

CGH40006P Page 1 CGH40006P Page 2 CGH40006P Page 3

TAGS

CGH40006P
Power
GaN
HEMT
CGH40006S
CGH40010
CGH40025
MACOM

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