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CGH40010 - RF Power GaN HEMT

Overview

PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits.

Key Features

  • Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 14 dB Small Signal Gain at 4.0 GHz 13 W typical P3dB 65 % Efficiency at P3dB 28 V Operation.