CGH40010 hemt equivalent, rf power gan hemt.
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* Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 14 dB Small Signal Gain at 4.0 GHz 13 W typical P3dB 65 % Efficiency at P3dB .
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and com.
RES,1/16W,0603,1%,0 OHMS RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.5pF, +/-0.05pF, 0603 CAP, 0.7pF, +.
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