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Cree

CGH40010 Datasheet Preview

CGH40010 Datasheet

RF Power GaN HEMT

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CGH40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40010, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40010 ideal for linear and
compressed amplifier circuits. The transistor is available in both screw-
down, flange and solder-down, pill packages.
PaPcNk’sa:gCeGTHyp4e0s0:1404F0&16C6G, H&4404001109P6
FEATURES
Up to 6 GHz Operation
16 dB Small Signal Gain at 2.0 GHz
14 dB Small Signal Gain at 4.0 GHz
13 W typical PSAT
• 65 % Efficiency at PSAT
28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/wireless
1




Cree

CGH40010 Datasheet Preview

CGH40010 Datasheet

RF Power GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
84
-10, +2
-65, +150
225
4.0
1.5
245
60
Thermal Resistance, Junction to Case3
RθJC
8.0
Case Operating Temperature3,4
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH40010F at PDISS = 14 W.
4 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current
IDS 2.9
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics2 (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted)
Small Signal Gain
GSS 12.5
Power Output3
PSAT
10
Drain Efficiency4
η 55
Output Mismatch Stress
VSWR
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging.
2 Measured in CGH40010-AMP.
3 PSAT is defined as IG = 0.36 mA.
4 Drain Efficiency = POUT / PDC
CGS
CDS
CGD
Typ.
-3.0
-2.7
3.5
14.5
12.5
65
4.5
1.3
0.2
Max.
-2.3
10 : 1
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Units
Conditions
VDC VDS = 10 V, ID = 3.6 mA
VDC VDS = 28 V, ID = 200 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 3.6 mA
dB VDD = 28 V, IDQ = 200 mA
W VDD = 28 V, IDQ = 200 mA
% VDD = 28 V, IDQ = 200 mA, PSAT
No damage at all phase angles,
Y VDD = 28 V, IDQ = 200 mA,
POUT = 10 W CW
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH40010 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGH40010
Description RF Power GaN HEMT
Maker Cree
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