GaN Datasheet | Specifications & PDF Download

TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

(211 views)

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

(146 views)

10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature

(133 views)

Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

(96 views)

Li/Mn0 2 CR123A Lithium/Manganese Dioxide Battery Key Features ▪ Industry Highest Cell Capacity & High Energy ▪ High voltage response, stable during

(91 views)

TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

(84 views)

(80 views)

Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

(74 views)

T echnical Specification CR2032 Lithium Manganese Dioxide (Li-MnO2) Coin Batteries Dimensions(mm) ENERGY VERY ENDURE 1.TEMPERATURE CHARACTERISTICS

(71 views)

www.DataSheet4U.com NINGBO TIANBO GANGLIAN ELECTRONICS OC., LTD HJR4102 SPECIFICATION FILE NUMBER：T810S-T002A DATE：2004/06/25 ■ CONTACT DATA Contac

(67 views)

PCF7930/31/35 Memory organisation Memory structure Control memory flags of block 0 • Password (Bytes 0..6) The password is 56 bits long. If the pas

(64 views)

GS61008T Top-side cooled 100 V E-mode GaN transistor Datasheet Features • 100 V enhancement mode power transistor • Top-side cooled configuration • R

(62 views)

(61 views)

Product Folder Order Now Technical Documents Tools & Software Support & Community LMG1020 SNOSD45B – FEBRUARY 2018 – REVISED OCTOBER 2018 LMG1020

(58 views)

NV6148C 700V Advanced GaNSlim Power IC NV6148C 1. Features • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate

(58 views)

GS61008P Bottom-side cooled 100 V E-mode GaN transistor Datasheet Features • 100 V enhancement mode power transistor • Bottom-side cooled configurati

(57 views)

Genuine Aircraft Hardware Co. All original Text, Tables, and Drawings are Copyright 1994-2006 reproduction by permission only. MS21063 Nut, Self-loc

(55 views)

NV6144C 700V Advanced GaNSlim Power IC NV6144C 1. Feature • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate G

(53 views)

Data Sheet CR 2032 Lithium Manganese Dioxide Type Number …………………….……… 6032 Designation IEC ………………..……….. CR 2032 System ……………………………..…….. Li-Mangane

(52 views)

PCF7930/31/35 Memory organisation Memory structure Control memory flags of block 0 • Password (Bytes 0..6) The password is 56 bits long. If the pas

(52 views)