GaN Datasheet | Pinout, Features, Price Comparison & PDF

TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature

TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

JW1568K 650V Half-Bridge GaN with Gate Driver Preliminary Specifications Subject to Change without Notice DESCRIPTION FEATURES The JW1568K is an a

T echnical Specification CR2032 Lithium Manganese Dioxide (Li-MnO2) Coin Batteries Dimensions(mm) ENERGY VERY ENDURE 1.TEMPERATURE CHARACTERISTICS

GS61004B 100V enhancement mode GaN transistor Datasheet Features • 100V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on

NV6148C 700V Advanced GaNSlim Power IC NV6148C 1. Features • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate

Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

Public IGI60L2727B1M Final datasheet CoolGaNTM Drive HB 600V G5 270 m / 600 V GaN half-bridge with level-shift gate drivers Features • Two 270 m Ga

LMG2100R044 SNOSDF9B – JULY 2023 – REVISED MARCH 2024 LMG2100R044 100V, 35A GaN Half-Bridge Power Stage 1 Features • Integrated 4.4mΩ half-bridge GaN

TDG100E90BEP Bottom-side cooled, 100V E-mode GaN transistor Product Specification Features • 100 V enhancement mode GaN power switch • Bottom-side co

QPA1022 ® 8.5 – 11 GHz 4 W GaN Power Amplifier Product Overview Qorvo’s QPA1022 is a packaged, high performance power amplifier fabricated on Qorvo

D10040200P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid D10040200PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J www.DataSheet4U.com Product Desc

Genuine Aircraft Hardware Co. All original Text, Tables, and Drawings are Copyright 1994-2006 reproduction by permission only. MS21063 Nut, Self-loc

RX65T300HS2A 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit

Preliminary Specifications Subject to Change without Notice JW1565J Offline QR GaN Flyback Converter DESCRIPTION JW1565J is an isolated offline flyb

GS66508P Bottom-side cooled 650 V E-mode GaN transistor not recommended for new designs- see GS66508B Features • 650 V enhancement mode power switch