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A2G35S200-01SR3 - RF Power GaN Transistor

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NXP

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A2G35S200-01SR3 RF Power GaN Transistor by NXP - Datasheet Preview — Datasheet preview – A2G35S200-01SR3

Datasheet Details

Part number	A2G35S200-01SR3
Manufacturer	NXP
File Size	330.12 KB
Description	RF Power GaN Transistor
Datasheet	A2G35S200-01SR3 Datasheet
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Features

High Terminal Impedances for Optimal Broadband Performance.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Jul 14, 2020 |