A2G35S200-01SR3 Datasheet RF Power GaN Transistor

Manufacturer: NXP Semiconductors

A2G35S200-01SR3 rf power gan transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	A2G35S200-01SR3
Manufacturer	NXP Semiconductors
File Size	330.12 KB
Description	RF Power GaN Transistor
Datasheet	A2G35S200-01SR3 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: A2G35S200--01S Rev.

0, 5/2016 RF Power GaN Transistor This 40 W RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz.

This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band.

Key Features

High Terminal Impedances for Optimal Broadband Performance.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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