A3G26D055N Datasheet Airfast RF Power GaN Amplifier

Manufacturer: NXP Semiconductors

A3G26D055N airfast rf power gan amplifier by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	A3G26D055N
Manufacturer	NXP Semiconductors
File Size	416.89 KB
Description	Airfast RF Power GaN Amplifier
Datasheet	A3G26D055N Datasheet

General Description

This 8 W symmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band.

There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Overview

A3G26D055N Airfast RF Power GaN Amplifier Rev.

3 — 18 October 2023 Product data sheet 1.

Key Features

High terminal impedances for optimal broadband performance.
Improved linearized error vector magnitude with next generation signal.
Able to withstand extremely high output VSWR and broadband operating conditions.
Designed for low complexity analog or digital linearization systems.
Optimized for massive MIMO active antenna systems for 5G base stations 3 Typical performance Table 1. 2600 MHz.
Typical Doherty single-carrier W-CDMA reference c.

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