A3G26H502W17S Datasheet RF Power GaN Transistor

Manufacturer: NXP Semiconductors

A3G26H502W17S rf power gan transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	A3G26H502W17S
Manufacturer	NXP Semiconductors
File Size	341.12 KB
Description	RF Power GaN Transistor
Datasheet	A3G26H502W17S Datasheet

Overview

NXP Semiconductors Technical Data Document Number: A3G26H502W17S Rev.

1, 01/2021 RF Power GaN Transistor This 80 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band.

Key Features

High terminal impedances for optimal broadband performance.
Advanced high performance in--package Doherty.
Improved linearized error vector magnitude with next generation signal.
Able to withstand extremely high output VSWR and broadband operating conditions A3G26H502W17S 2496.
2690 MHz, 80 W Avg. , 48 V.

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