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CGH40025F - GaN HEMT

General Description

RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-0.1pF, 0603 CAP, 0.5pF, +/-0.1pF, 0603 CAP, 1.0pF, +/-0.1pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF,

Key Features

  • Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.0 GHz 30 W typical P3dB 62 % Efficiency at P3dB 28 V Operation.

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📁 Similar Datasheet

Part Number Description Manufacturer
CGH40025 RF Power GaN HEMT MACOM
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Other Datasheets by Cree (now Wolfspeed)

Part Number Description
CGH40025 RF Power GaN HEMT
CGH40006P RF Power GaN HEMT
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CGH40010 RF Power GaN HEMT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. www.DataSheet4U.com The transistor is available in a screw-down, flange package. Package Type : 440166 PN: CGH4002 5F FEATURES • • • • • • Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.