CGH40025F
CGH40025F is GaN HEMT manufactured by Cree.
PRELIMINARY
25 W, RF Power GaN HEMT
Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and pressed amplifier circuits. .. The transistor is available in a screw-down, flange package.
Package Type : 440166 PN: CGH4002 5F
Features
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- - Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.0 GHz 30 W typical P3dB 62 % Efficiency at...
