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Cree

CGH40025F Datasheet Preview

CGH40025F Datasheet

GaN HEMT

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PRELIMINARY
CGH40025F
25 W, RF Power GaN HEMT
Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40025, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
www.DataSheetth4Ue.cCoGmH40025 ideal for linear and compressed amplifier circuits.
The transistor is available in a screw-down, flange package.
PackagPeNT:yCpGe:H4404002156F6
FEATURES
• Up to 4 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 13 dB Small Signal Gain at 4.0 GHz
• 30 W typical P3dB
62 % Efficiency at P3dB
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
www.cree.com/wireless





Cree

CGH40025F Datasheet Preview

CGH40025F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Thermal Resistance, Junction to
Case 1
VDSS
VGS
TSTG
TJ
IGMAX
TS
RθJC
www.DataNShoeteet:4U.com
1 Measured for the CGH40025F at PDISS = 28 W.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics2
Symbol
Min.
Typ.
Gate Threshold Voltage
VGS(th)
-3.0
-2.5
Gate Quiescent Voltage
VGS(Q)
-2.0
Saturated Drain Current
IDS 4.8 5.4
Drain-Source Breakdown Voltage
VBR
84
100
Case Operating Temperature
TC -10 –
Screw Torque
T––
RF Characteristics (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted)
Small Signal Gain
GSS – 13
Power Output at 3 dB
Compression
P3dB
30
Drain Efficiency1
η – 62
Output Mismatch Stress
VSWR
Dynamic Characteristics
Input Capacitance
CGS
Output Capacitance
CDS
Feedback Capacitance
CGD
Notes:
1 Drain Efficiency = POUT / PDC
2 Measured on wafer prior to packaging.
TBD
9.3
2.0
0.9
Rating
84
-10, +2
-55, +150
175
4.0
245
3.8
Units
Volts
Volts
˚C
˚C
mA
˚C
˚C/W
Max.
-1.8
+65
60
Units
Conditions
VDC
VDC
A
VDC
˚C
in-oz
VDS = 10 V, ID = 7.2 mA
VDS = 28 V, ID = 250 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 7.2 mA
Reference 440166 Package Revision 3
dB VDD = 28 V, IDQ = 250 mA
W VDD = 28 V, IDQ = 250 mA
% VDD = 28 V, IDQ = 250 mA, P3dB
No damage at all phase angles,
Y VDD = 28 V, IDQ = 250 mA,
POUT = 12 W CW
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
 CGH40025 Rev 1.0 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless


Part Number CGH40025F
Description GaN HEMT
Maker Cree
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CGH40025F Datasheet PDF






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