logo

CGH40025F Datasheet, Cree

CGH40025F hemt equivalent, gan hemt.

CGH40025F Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.41MB)

CGH40025F Datasheet

Features and benefits


*
*
*
*
*
* Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.0 GHz 30 W typical P3dB 62 % Efficiency at P3dB .

Application

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and com.

Description

RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-0.1pF, 0603 CAP, 0.5pF, +/-0.1pF, 0603 CAP, 1.0pF, .

Image gallery

CGH40025F Page 1 CGH40025F Page 2 CGH40025F Page 3

TAGS

CGH40025F
GaN
HEMT
Cree

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts