CGH40025F - GaN HEMT

Description

RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-0.1pF, 0603 CAP, 0.5pF, +/-0.1pF, 0603 CAP, 1.0pF, +/-0.1pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF,

Features

Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.0 GHz 30 W typical P3dB 62 % Efficiency at P3dB 28 V Operation.

Cree

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Datasheet Details

Part number	CGH40025F
Manufacturer	Cree
File Size	1.41 MB
Description	GaN HEMT
Datasheet	CGH40025F Datasheet
Additional preview pages of the CGH40025F datasheet.

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Full PDF Text Transcription

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PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. www.DataSheet4U.com The transistor is available in a screw-down, flange package. Package Type : 440166 PN: CGH4002 5F FEATURES • • • • • • Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.

Published: Aug 18, 2008 |