Wolfspeed Datasheet | Specifications & PDF Download

CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transist

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CG2H40025 25 W, 28 V RF Power GaN HEMT Description Wolfspeed’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEM

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C4D05120A 4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Ba

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transist

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C6D10065Q 6th Generation 650 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Ba

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C4D20120D 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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C6D20065D 6th Generation 650 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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CGH35060F2/P2 60 W, 3.1 - 3.5 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (

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CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Description Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT)

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C6D04065A 6th Generation 650 V, 4 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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CGHV14800 800 W, 960 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14800 is a gallium nitride (GaN) high electron mo

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CGHV14250 250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility t

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PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt

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CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Description Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT)

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CPM3-1200-0075A. 1 CPM3-1200-0075A Wolfspeed SiC Gen 3 MOSFET Description This is the Wolfspeed’s 3rd generation of high performance silicon carbide

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CPM2-1200-0080A. 1 CPM2-1200-0080A Wolfspeed SiC Gen 2nd MOSFET Description This is the Wolfspeed’s 2nd generation of high performance silicon carb

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CMPA801B025 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transisto

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CAB425M12XM3 VDS 1200 V 5 4 IDS 3 425 A 2 1 1200 V, 3.2 mΩ, Silicon Carbide, Half-Bridge Module D Technical Features • High Power Density

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PTGA090304MD Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W, 48 V, 575 – 960 MHz Description The PTGA090304MD is a wideband, two-stage,

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