Wolfspeed Datasheet | Specifications & PDF Download

PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended f

(2 views)

PXAC200902FC Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz Description The PXAC200902FC is a 90-watt LDMOS FET with an asymm

(2 views)

PXAC210552FC Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Description The PXAC210552FC is a 55-watt LDMOS FET with an asym

(2 views)

WAS530M12BM3, 5 WAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

(2 views)

GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on

(1 views)

GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on

(1 views)

GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Description The GTVA262701FA is a 270-watt GaN on SiC high

(1 views)

PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002FC is a 190-watt LDMOS FET intended f

(1 views)

PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt

(1 views)

PTFA220121M High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET int

(1 views)

PTRA082808NF Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Description The PTRA082808NF is a 280-watt LDMOS FET intended for

(1 views)

Confidential, Limited Internal Distribution PTFA080551E/F TCohnefirdmentaialll,yL-imEintehdaInntecrneadl DiHstirgibhutioPnower RF LDMOS FETs 5T5heWrm,

(1 views)

Confidential, Limited Internal Distribution PTFA080551E/F TCohnefirdmentaialll,yL-imEintehdaInntecrneadl DiHstirgibhutioPnower RF LDMOS FETs 5T5heWrm,

(1 views)

PXAD184218FV Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz Description The PXAD184218FV is a 420-watt (P3dB) LDMOS FET wit

(1 views)

PTMA210152M Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-s

(1 views)

PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an a

(1 views)

PTVA120252MT Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 – 1400 MHz Description The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET desig

(1 views)

PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 – 2400 MHz Description The PXAC241002FC is a 100-watt LDMOS FET with an asy

(1 views)

PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz Description The PXAC203302FV is a 330-watt LDMOS FET with an as

(1 views)

GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Description The GTVA263202FC is a 340-watt (P3dB) GaN on S

(1 views)