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CAS530M12BM3, 5
CAS530M12BM3T
1200 V, 530 A, Silicon Carbide, Half-Bridge Module
D
Technical Features
• Industry Standard 62 mm Footprint • Ultra Low Loss, High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Aluminum Nitride Insulator
C
VDS IDS4
1200 V
3 530 A
2
V+
G1 K1
Mid
G2 K2
V-
Typical Applications • Induction Heating • Motor Drives • Renewables • Railway Auxiliary & Traction • EV Fast Charging • UPS and SMPS
System Benefits
3
• 62 mm Form Factor Enables System Retrofit • Increased System Efficiency, due to Low Switching &
Conduction Losses of SiC
B
4
5
1
Key Parameters
6 7
2
Parameter
Symbol Min. Typ. Max.
CAS530M12BM3 Datasheet
