CGH40035F
CGH40035F is RF Power GaN HEMT manufactured by Cree.
35 W, RF Power GaN HEMT
Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and pressed amplifier circuits. The transistor is available in a screw-down, flange package.
Package Type : 440193 PN: CGH4003 5F
Features
- Up to 4 GHz Operation
- 15 dB Small Signal Gain at 2.0 GHz
- 13 dB Small Signal Gain at 4.0 GHz
- 45 W typical PSAT
- 60 % Efficiency at PSAT
- 28 V Operation
APPLI...
