CGH40035F hemt equivalent, rf power gan hemt.
* Up to 4 GHz Operation
* 15 dB Small Signal Gain at 2.0 GHz
* 13 dB Small Signal Gain at 4.0 GHz
* 45 W typical PSAT
* 60 % Efficiency at PSAT <.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and co.
RES, 1/16W, 0603, ≤5%, 5.1 OHMS RES, 1/16W, 0603, 1%, 100 OHMS CAP, 470PF, 5%, 100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 0.6pF, +/-0.05pF, 0603 CAP, 1.2pF, +/-0.1pF, 0603 CAP 4.7PF, +/- 0.25pF, ATC.
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