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CGH40035F Datasheet Preview

CGH40035F Datasheet

RF Power GaN HEMT

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CGH40035F
35 W, RF Power GaN HEMT
Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40035F, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40035F ideal for linear
and compressed amplifier circuits. The transistor is available in a
screw-down, flange package.
PackagPeNT:yCpGe:H4404003159F3
FEATURES
APPLICATIONS
• Up to 4 GHz Operation
• 15 dB Small Signal Gain at 2.0 GHz
• 13 dB Small Signal Gain at 4.0 GHz
• 45 W typical PSAT
• 60 % Efficiency at PSAT
• 28 V Operation
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentationwww.DataSheet.net/
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
www.cree.com/wireless
1
Datasheet pdf - http://www.DataSheet4U.co.kr/




CREE

CGH40035F Datasheet Preview

CGH40035F Datasheet

RF Power GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature1
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
TS
τ
84
-10, +2
-65, +150
225
10.0
245
80
Thermal Resistance, Junction to Case2
RθJC
3.0
Case Operating Temperature2,3
TC
-40, +150
Note:
1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
2 Measured for the CGH40035F at PDISS = 42 W.
3 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
˚C
˚C
mA
˚C
in-oz
˚C/W
˚C
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Gate Threshold Voltage
VGS(th)
-3.8
-3.3
Gate Quiescent Voltage
Saturated Drain Current
VGS(Q)
IDS
8.7
-3.0
10.5
www.DataSheet.net/
Drain-Source Breakdown Voltage VBR 120
RF Characteristics2 (TC = 25˚C, F0 = 3.5 GHz unless otherwise noted)
Small Signal Gain
GSS 13 14
Power Output3
PSAT
30
45
Drain Efficiency4
η 50 60
Max.
-2.3
Output Mismatch Stress
VSWR
Dynamic Characteristics
Input Capacitance
CGS
Output Capacitance
CDS
Feedback Capacitance
CGD
Notes:
1 Measured on wafer prior to packaging.
2 Measured in CGH40035F-TB.
3 PSAT is defined as IG = 1.08 mA.
4 Drain Efficiency = POUT / PDC
– 10 : 1
14.7
4.9
0.6
Units
Conditions
VDC VDS = 10 V, ID = 10.8 mA
VDC VDS = 28 V, ID = 500 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 10.8 mA
dB VDD = 28 V, IDQ = 500 mA
W VDD = 28 V, IDQ = 500 mA
% VDD = 28 V, IDQ = 500 mA, PSAT
No damage at all phase angles,
Y VDD = 28 V, IDQ = 500 mA,
POUT = 35 W CW
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
2 CGH40035 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number CGH40035F
Description RF Power GaN HEMT
Maker CREE
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