LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 15 dB Power Gain at 1.8 GHz ♦ 1

CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

2 W POWER PHEMT • FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compressi

PACKAGED 2W POWER PHEMT • FEATURES ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency LP300

SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mob

2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics.

TC3889 PRE.2_04/27/2005 Preliminary 5W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • • • • • • • • 5W Typical Output Power 12dB Typical Linea

1W POWER PHEMT • FEATURES ♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression

LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

SPF5189Z ® 50MHz-4000MHz, GaAs pHEMT Low-Noise Amplifier Product Overview The SPF5189Z is a high performance pHEMT Low-Noise MMIC amplifier designed

GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

PACKAGED 1W POWER PHEMT • FEATURES ♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 dBm Output IP3 at 15GHz ♦ 60%

Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Powe

Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Powe

TC2282 REV3_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES • • • • • • 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga =

Data Sheet FEATURES Low noise figure: 1.8 dB P1dB output power: 14.5 dBm PSAT output power: 17.5 dBm High gain: 15 dB Output IP3: 29 dBm Supply voltag

CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Description Wolfspeed’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor

www.DataSheet4U.com v00.1007 HMC-ALH444 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Features Noise Figure: 1.75 dB @ 10 GHz Gain: 17 dB P1dB Outpu

E-pHEMT MMIC Product Features • 4-Way Splitter • Small size (3X3 mm) • QFN SMD Type package • Higher productivity • Lower manufacturing cost • -63dBc