HEMT Datasheet | Specifications & PDF Download

CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

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SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

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LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 15 dB Power Gain at 1.8 GHz ♦ 1

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Advanced Information SPF-5043Z Product Description The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The o

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May/2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4934BM super-low n

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GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

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PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4

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TP44100SG SUPERIOR GaN TP44100SG – 90 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 90 mΩ • IDS: 19 A (max) / IDSpulse: 30 A (m

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Preliminary Data Sheet • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Ou

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DATA SHEET AS193-73, AS193-73LF: PHEMT GaAs IC High-Linearity 3 V Control SPDT Switch 0.1–2.5 GHz Features ● 2.5 to 5 V linear operation ● Harmonics

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Preliminary Data Sheet 1.0 FMS2002QFN ES1 SP3T Reflective pHEMT MMIC Switch Description The FMS2002QFN is a linear high power Single-Pole Three-Thr

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Preliminary SUF-2000 Product Description Sirenza Microdevices’ SUF-2000 is a monolithically matched broadband high IP3 gain block covering 0.05-10 GH

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GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF004 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel

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TC2282 REV3_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES • • • • • • 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga =

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PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Pow

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www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.ne

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TC3889 PRE.2_04/27/2005 Preliminary 5W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • • • • • • • • 5W Typical Output Power 12dB Typical Linea

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ATF-531P8 High Linearity Enhancement Mode[1] ­Pseudomorphic HEMT in 2x2 mm2 LPCC[3] ­Package Data Sheet Description Avago Technologies’ ­­ATF‑531P8 i

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ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Avago Technologies’ ATF‑54143 is

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CGH27030 30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Description Wolfspeed's CGH27030 is a gallium nitride (GaN) high ele

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