HEMT Datasheet | Specifications & PDF Download

CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operat

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PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT • FEATURES ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz

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Filtronic Solid State Features • • • • • • • • 9dB Typical Gain 18dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Freque

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Preliminary Data Sheet 1.0 FMS2001 ES1 Low Loss SPDT Reflective pHEMT MMIC Switch Description The FMS2001 is a low loss linear Single-Pole Double-T

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GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF001 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel

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Advance Product Information September 19, 2005 DC - 20 GHz Discrete power pHEMT • • • • • • • • TGF2022-06 Key Features and Performance Frequency R

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www.DataSheet4U.com TC2182 REV4_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES • • • • • • • 0.5 dB Typical Noise Figure at 12 GHz Hig

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www.DataSheet4U.com PRELIMINARY DATA SHEET SKY13252-321: PHEMT GaAs IC Diversity Switch DC–6 GHz Applications ● QFN-12 0.118 (3.00 mm) 0.008 (0.20

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CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electr

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Product Datasheet August 7, 2007 DC - 12 GHz Discrete power pHEMT TGF2021-08 Key Features and Performance • Frequency Range: DC - 12 GHz • > 39 dBm

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FEATURES ŋINTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 50.0dBm at Pin= 42dBm ŋHIGH GAIN GL= 12.0dB at 9.0GHz to 9.8GHz ŋHERMETICALLY SEALED PACKAGE ŋPULS

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HMC770LP4BE v02.1111 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Amplifiers - Driver & Gain Block - SMT 6-1 Typical Applications F

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CGH27030 30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Description Wolfspeed's CGH27030 is a gallium nitride (GaN) high ele

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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SPF-5189Z 50MHz to 4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF-5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Package: SOT-89 P

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GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on

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LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

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2 W POWER PHEMT • FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compressi

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