HEMT Datasheet | Pinout, Features, Price Comparison & PDF

CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 15 dB Power Gain at 1.8 GHz ♦ 1

2 W POWER PHEMT • FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compressi

PACKAGED 2W POWER PHEMT • FEATURES ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency LP300

1W POWER PHEMT • FEATURES ♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression

LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Powe

GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

PACKAGED 1W POWER PHEMT • FEATURES ♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 dBm Output IP3 at 15GHz ♦ 60%

May/2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4934BM super-low n

Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Powe

DATA SHEET AS193-73, AS193-73LF: PHEMT GaAs IC High-Linearity 3 V Control SPDT Switch 0.1–2.5 GHz Features ● 2.5 to 5 V linear operation ● Harmonics

MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mob

Preliminary SUF-2000 Product Description Sirenza Microdevices’ SUF-2000 is a monolithically matched broadband high IP3 gain block covering 0.05-10 GH

GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF004 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel

TC2282 REV3_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES • • • • • • 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga =

TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Tr

CGH27030 30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Description Wolfspeed's CGH27030 is a gallium nitride (GaN) high ele

Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Powe