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CGH27015
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down, flange and solder-down, pill packages.
PPacNk:aCgGeHT2y7p0e1: 454F0a1n6d6CaGnHd2474001159P6
Typical Performance 2.3-2.7 GHz (TC = 25˚C)
Parameter
2.3 GHz
2.4 GHz
Small Signal Gain
16.9
16.0
2.5 GHz 15.1
2.6 GHz 14.6
2.7 GHz 14.3
EVM at PAVE = 33 dBm
1.69
1.51
1.50
1.66
1.93
Drain Efficiency at PAVE = 33 dBm
27.1
27.8
28.4
28.0
28.
CGH27015 Datasheet
