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CGH27015 Datasheet Preview

CGH27015 Datasheet

GaN HEMT

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CGH27015
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed
specifically for high efficiency, high gain and wide bandwidth capabilities, which makes
the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier
applications. The unmatched transistor is available in both screw-down, flange and
solder-down, pill packages.
PPacNk:aCgGeHT2y7p0e1: 454F0a1n6d6CaGnHd2474001159P6
Typical Performance 2.3-2.7 GHz (TC = 25˚C)
Parameter
2.3 GHz
2.4 GHz
Small Signal Gain
16.9
16.0
2.5 GHz
15.1
2.6 GHz
14.6
2.7 GHz
14.3
EVM at PAVE = 33 dBm
1.69
1.51
1.50
1.66
1.93
Drain Efficiency at PAVE = 33 dBm
27.1
27.8
28.4
28.0
28.0
Note:
Measured in the CGH27015F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
%
dB
Features
• VHF - 3.0 GHz Operation
• 15 W Peak Power Capability
• 14.5 dB Small Signal Gain
• 2 W PAVE < 2.0 % EVM
• 28 % Efficiency at 2 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for WiMAX Mobile Access 802.16e OFDMA Applications
Subject to change without notice.
www.cree.com/rf
1




CREE

CGH27015 Datasheet Preview

CGH27015 Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
84
-10, +2
-65, +150
225
4.0
1.5
245
60
Thermal Resistance, Junction to Case3
RθJC
8.0
Case Operating Temperature3
TC -40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH27015F at PDISS = 14W.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Units
25˚C
25˚C
25˚C
25˚C
85˚C
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage
VGS(Q)
-2.7
VDC VDS = 28 V, ID = 100 mA
Saturated Drain Current
IDS 2.9 3.5
A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR 120
VDC VGS = -8 V, ID = 3.6 mA
RF Characteristics2,3 (TC = 25˚C, F0 = 2.5 GHz unless otherwise noted)
Small Signal Gain
GSS 13 15 – dB VDD = 28 V, IDQ = 100 mA
Drain Efficiency4
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
η
EVM
VSWR
20
28 –
2.0
10 : 1
% VDD = 28 V, IDQ = 100 mA,
PAVE = 33 dBm
%
VDD = 28 V, IDQ = 100 mA,
PAVE = 33 dBm
No damage at all phase angles,
Y VDD = 28 V, IDQ = 100 mA,
PAVE = 33 dBm OFDM PAVE
Input Capacitance
CGS 4.5 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS 1.3 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.2 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in the CGH27015F-AMP test fixture.
3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4 Drain Efficiency = POUT / PDC.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH27015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless


Part Number CGH27015
Description GaN HEMT
Maker CREE
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CGH27015 Datasheet PDF






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