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CREE

CGH40120F Datasheet Preview

CGH40120F Datasheet

RF Power GaN HEMT

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CGH40120F
120 W, RF Power GaN HEMT
Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40120F, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40120F ideal for linear and
compressed amplifier circuits. The transistor is available in a flange
package.
PackagPeNT:yCpeGsH: 4404102109F3
FEATURES
Up to 2.5 GHz Operation
20 dB Small Signal Gain at 1.0 GHz
15 dB Small Signal Gain at 2.0 GHz
120 W Typical PSAT
• 70 % Efficiency at PSAT
28 V Operation
APPLICATIONS
2-Way Private Radio
• Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
1




CREE

CGH40120F Datasheet Preview

CGH40120F Datasheet

RF Power GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
84
-10, +2
-65, +150
225
30
12
245
80
Thermal Resistance, Junction to Case3
RθJC
1.39
Case Operating Temperature3,4
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH40120F at PDISS = 115 W.
4 See also, the Power Dissipation De-rating Curve on Page 7.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 23.2
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics3 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
Small Signal Gain
GSS 17.5
Power Output4
PSAT
100
Drain Efficiency5
η 55
Output Mismatch Stress
VSWR
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGH40120F-AMP
4 PSAT is defined as IG = 2.8 mA.
5 Drain Efficiency = POUT / PDC
CGS
CDS
CGD
Typ.
-3.0
-2.7
28.0
19
120
70
Max.
-2.3
10 : 1
35.3
9.1
1.6
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Units
Conditions
VDC VDS = 10 V, ID = 28.8 mA
VDC VDS = 28 V, ID = 1.0 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 28.8 mA
dB VDD = 28 V, IDQ = 1.0 A
W VDD = 28 V, IDQ = 1.0 A
% VDD = 28 V, IDQ = 1.0 A, POUT = PSAT
No damage at all phase angles,
Y VDD = 28 V, IDQ = 1.0 A,
POUT = 100 W CW
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH40120F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGH40120F
Description RF Power GaN HEMT
Maker CREE
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