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CGH40120F - RF Power GaN HEMT

Features

  • Up to 2.5 GHz Operation.
  • 20 dB Small Signal Gain at 1.0 GHz.
  • 15 dB Small Signal Gain at 2.0 GHz.
  • 120 W Typical PSAT.
  • 70 % Efficiency at PSAT.
  • 28 V Operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. Package Type s: 440193 PN: CGH4012 0F FEATURES • Up to 2.5 GHz Operation • 20 dB Small Signal Gain at 1.0 GHz • 15 dB Small Signal Gain at 2.0 GHz • 120 W Typical PSAT • 70 % Efficiency at PSAT • 28 V Operation APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure www.DataSheet.
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