Datasheet Summary
120 W, RF Power GaN HEMT
Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120F ideal for linear and pressed amplifier circuits. The transistor is available in a flange package.
Package Type s: 440193 PN: CGH4012 0F
Features
- Up to 2.5 GHz Operation
- 20 dB Small Signal Gain at 1.0 GHz
- 15 dB Small Signal Gain at 2.0 GHz
- 120 W Typical PSAT
- 70 % Efficiency at PSAT
- 28 V Operation
APPLICATIONS...
