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Cree

CGH40180PP Datasheet Preview

CGH40180PP Datasheet

RF Power GaN HEMT

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CGH40180PP
180 W, RF Power GaN HEMT
Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40180PP ideal for linear
and compressed amplifier circuits. The transistor is available in a 4-lead
flange package.
PackaPgNe:TCyGpeHs4:04148001P9P9
FEATURES
Up to 2.5 GHz Operation
20 dB Small Signal Gain at 1.0 GHz
15 dB Small Signal Gain at 2.0 GHz
220 W typical PSAT
• 70 % Efficiency at PSAT
28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
1




Cree

CGH40180PP Datasheet Preview

CGH40180PP Datasheet

RF Power GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
84
-10, +2
-65, +150
225
60
24
245
80
Thermal Resistance, Junction to Case3
RθJC
0.9
Case Operating Temperature3,4
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 CGH40180PP at PDISS = 224 W.
4 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 46.4
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics3,4 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
Power Gain
PG 13
Small Signal Gain
GSS -
Power Output at Saturation5
PSAT
180
Drain Efficiency6
η 56
Output Mismatch Stress
VSWR
Dynamic Characteristics7
Input Capacitance
CGS
Output Capacitance
CDS
Feedback Capacitance
CGD
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGH40180PP-AMP, including all coupler losses.
4 IDQ of 2.0 A is by biasing each device at 1.0 A.
5 PSAT is defined as: Q1 or Q2 = IG = 2.8 mA.
6 Drain Efficiency = POUT / PDC
7 Capacitance values are for each side of the device.
Typ.
-3.0
-2.7
56.0
-
19
220
65
35.7
9.6
1.6
Max.
-2.3
-
10 : 1
Units
Conditions
VDC VDS = 10 V, ID = 57.6 mA
VDC VDS = 28 V, ID = 2.0 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 57.6 mA
dB VDD = 28 V, IDQ = 2.0 A, POUT = PSAT
dB VDD = 28 V, IDQ = 2.0 A
W VDD = 28 V, IDQ = 2.0 A
% VDD = 28 V, IDQ = 2.0 A, POUT = PSAT
No damage at all phase angles,
Y VDD = 28 V, IDQ = 2.0 A,
POUT = 180 W CW
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGH40180PP
Description RF Power GaN HEMT
Maker Cree
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