Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
84
-10, +2
-65, +150
225
60
24
245
80
Thermal Resistance, Junction to Case3
RθJC
0.9
Case Operating Temperature3,4
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 CGH40180PP at PDISS = 224 W.
4 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
–
Saturated Drain Current2
IDS 46.4
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics3,4 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)
Power Gain
PG 13
Small Signal Gain
GSS -
Power Output at Saturation5
PSAT
180
Drain Efficiency6
η 56
Output Mismatch Stress
VSWR
Dynamic Characteristics7
Input Capacitance
CGS
Output Capacitance
CDS
Feedback Capacitance
CGD
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGH40180PP-AMP, including all coupler losses.
4 IDQ of 2.0 A is by biasing each device at 1.0 A.
5 PSAT is defined as: Q1 or Q2 = IG = 2.8 mA.
6 Drain Efficiency = POUT / PDC
7 Capacitance values are for each side of the device.
–
–
–
–
Typ.
-3.0
-2.7
56.0
–
-
19
220
65
–
35.7
9.6
1.6
Max.
-2.3
–
–
–
-
–
–
–
10 : 1
–
–
–
Units
Conditions
VDC VDS = 10 V, ID = 57.6 mA
VDC VDS = 28 V, ID = 2.0 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 57.6 mA
dB VDD = 28 V, IDQ = 2.0 A, POUT = PSAT
dB VDD = 28 V, IDQ = 2.0 A
W VDD = 28 V, IDQ = 2.0 A
% VDD = 28 V, IDQ = 2.0 A, POUT = PSAT
No damage at all phase angles,
Y VDD = 28 V, IDQ = 2.0 A,
POUT = 180 W CW
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
