CGH40180PP - RF Power GaN HEMT

Description

RES, 100 Ohm, +/-1%, 1 W, 2512 RES, 511 Ohm, +/- 5%, 1/16W, 0603 RES, 1/16W, 0603, 1%, 5.1 OHMS CAP, 27 pF,+/-5% 0805,ATC600F CAP, 3.9PF, +/-0.1 pF, 0603, ATC600S CAP, 3.3PF, +/-0.1 pF, 0603, ATC600S CAP, 1.8PF, +/-0.1 pF, 0603, ATC600S CAP, 1.0PF, +/-0.1 pF, 0603, ATC600S CAP, 0.9PF, +/-0.1 pF, 060

Features

Up to 2.5 GHz Operation.
20 dB Small Signal Gain at 1.0 GHz.
15 dB Small Signal Gain at 2.0 GHz.
220 W typical PSAT.
70 % Efficiency at PSAT.
28 V Operation.

Cree

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Datasheet Details

Part number	CGH40180PP
Manufacturer	Cree
File Size	1.89 MB
Description	RF Power GaN HEMT
Datasheet	CGH40180PP Datasheet
Additional preview pages of the CGH40180PP datasheet.

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Full PDF Text Transcription

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CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. PackaPgNe:TCyGpeHs4:04148001P9P9 FEATURES • Up to 2.5 GHz Operation • 20 dB Small Signal Gain at 1.0 GHz • 15 dB Small Signal Gain at 2.

Published: Apr 19, 2016 |