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CGH40180PP Datasheet RF Power GaN HEMT

Manufacturer: Cree (now Wolfspeed)

Overview: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.

Key Features

  • Up to 2.5 GHz Operation.
  • 20 dB Small Signal Gain at 1.0 GHz.
  • 15 dB Small Signal Gain at 2.0 GHz.
  • 220 W typical PSAT.
  • 70 % Efficiency at PSAT.
  • 28 V Operation.

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