* Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A
* Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A
* Low Profile − 1 mm Max in a Power 33
* Pb−Free, Halide .

Features
* Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A
* Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A
*.

This N−Channel MOSFET is a rugged gate version of onsemi‘s advanced POWERTRENCH® process. It has been optimized for power management applications. Features
* Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A
* Max RDS(on) = 215 mW at VGS = 6 V, .

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