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FDMC2610 Datasheet, ON Semiconductor

FDMC2610 mosfet equivalent, n-channel mosfet.

FDMC2610 Avg. rating / M : 1.0 rating-11

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FDMC2610 Datasheet

Features and benefits


* Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A
* Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A
* Low Profile − 1 mm Max in a Power 33
* Pb−Free, Halide .

Application

Features
* Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A
* Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A
*.

Description

This N−Channel MOSFET is a rugged gate version of onsemi‘s advanced POWERTRENCH® process. It has been optimized for power management applications. Features
* Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A
* Max RDS(on) = 215 mW at VGS = 6 V, .

Image gallery

FDMC2610 Page 1 FDMC2610 Page 2 FDMC2610 Page 3

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