| Description | This N−Channel MOSFET is a rugged gate version of onsemi‘s advanced POWERTRENCH® process. It has been optimized for power management applications. Features • Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A • Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A • Low Profile − 1 mm Max in a Power 33 • Pb−Free, Halide Free and RoHS Compliant Applications • DC−DC Conversion MOSFET MAXIMUM RATINGS (TA = 25°C... |
| Features |
• Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A • Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A • Low Profile − 1 mm Max in a Power 33 • Pb−Free, Halide Free and RoHS Compliant Applications • DC−DC Conversion MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 200 V VGS Gate to ... |
| Datasheet |
 FDMC2610 Datasheet - 315.51KB |
