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FDMC2D8N025S - N-Channel MOSFET

General Description

Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A High Performance Technology for Extremely Low rDS(on) SyncFETTM Schottky Body Diode 100% UIL Tested RoHS Compliant The FDMC2D8N025S has been desi

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDMC2D8N025S N-Channel PowerTrench® SyncFETTM www.onsemi.com FDMC2D8N025S N-Channel PowerTrench® SyncFETTM 25 V, 124 A, 1.9 mΩ Features General Description „ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A „ High Performance Technology for Extremely Low rDS(on) „ SyncFETTM Schottky Body Diode „ 100% UIL Tested „ RoHS Compliant The FDMC2D8N025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.