FDMC007N30D datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

Q1: N−Channel
* Max RDS(on) = 11.6 mW at VGS = 10 V, ID = 10 A
* Max RDS(on) = 13.3 mW at VGS = 4.5 V, ID = 9 A Q1: N−Channel
* Max RDS(on) = 6.4 mW at VGS = .

Application

* Mobile Computing
* Mobile Internet Devices
* General Purpose Point of Load MOSFET MAXIMUM RATINGS (TC = 2.

Description

This device includes two specialized N−Channel MOSFETs in a dual Power33 (3mm × 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchrono.

Image gallery