PPM3T18V6 (Prisemi)
P-Channel MOSFET
Description
PPM3T18V6 P-Channel MOSFET
The enhancement mode MOS is extremely high density cell and low on-resistance. This PPM3T18V6 uses advanced t
(96 views)
PPM8PN30V12 (Prisemi)
P-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) -30
MOSFET Product Summary
R
(29 views)
PPM3FD20V1E (Prisemi)
P-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) -20
MOSFET Product Summary
(29 views)
PPM3FD20V1EN (Prisemi)
P-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) -20
MOSFET Product Summary
(28 views)
PPM3FD20V2 (Prisemi)
P-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
MOSFET Product Summary
VDS(V) -20
(26 views)
PPM3FD20V2N (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
MOSFET Product Summary
VDS(V) -20
(26 views)
PPMT2305 (Prisemi)
P-Channel MOSFET
Description
The PPMT2305 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load s
(23 views)
PPM6N15V12 (Prisemi)
P-Channel MOSFET
Description
The PPM6N15V12 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load
(23 views)
PPM523T201E0 (Prisemi)
P-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) -20
MOSFET Product Summary
(20 views)
PPM6N12V10 (Prisemi)
P-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
PPM6N12V10 P-Channel MOSFET
VDS(V) -12
MOSFET Product Su
(20 views)
PPMT32V4 (Prisemi)
P-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
PPMT32V4 P-Channel MOSFET
D（3）
VDS(V) -30
MOSFET Product
(19 views)
PPM6N30V8 (Prisemi)
P-Channel MOSFET
Description
The PPM6N30V8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load
(19 views)
PPMT20V4A (Prisemi)
P-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
Trench Power MV MOSFET technology
(19 views)
PPM8P30V8 (Prisemi)
P-Channel MOSFET
PPM8P30V8 P-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（5、6、7、8）
VDS(V) -30
MOSFET
(18 views)
PPM6N30V9 (Prisemi)
P-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
PPM6N30V9 P-Channel MOSFET
VDS(V) -30
MOSFET Product Sum
(18 views)
PPMT30V4 (Prisemi)
P-Channel MOSFET
PPMT30V4 P-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（3）
VDS(V) -30
MOSFET Produc
(17 views)
PPM6N30V4 (Prisemi)
P-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
PPM6N30V4 P-Channel MOSFET
VDS(V) -30
MOSFET Product Sum
(17 views)
PPMT3415R (Prisemi)
P-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
PPMT3415R P-Channel MOSFET
D（3）
VDS(V) -20
MOSFET Produc
(17 views)
PPMT30V3A (Prisemi)
P-Channel MOSFET
Description
PPMT30V3A P-Channel MOSFET
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
Trenc
(17 views)
PPMT2307 (Prisemi)
P-Channel MOSFET
Description
Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching
MOSFET Product Summary
VDS(V) -30
(16 views)
