Prisemi PPM Datasheet | Specifications & PDF Download

Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -20 MOSFET Product Summary

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) -30

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Description The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) -20

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -20 MOSFET Product Summary

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPMT32V4 P-Channel MOSFET D（3） VDS(V) -30 MOSFET Product

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -30 MOSFET Product Summary R

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Description  Trench Power LV MOSFET technology  High density cell design for Low RDS(ON)  High Speed switching MOSFET Product Summary VDS(V) -30

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Description PPM3T18V6 P-Channel MOSFET The enhancement mode MOS is extremely high density cell and low on-resistance. This PPM3T18V6 uses advanced t

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N20V10 P-Channel MOSFET VDS(V) -20 MOSFET Product Su

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Description PPMS8N20V3 P-Channel 1.8-V (G-S) MOSFET with Schottky Diode VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.110 @ VGS=-4.5V -2

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PPM6N20V5 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) -20 MOSFET Product Sum

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N30V4 P-Channel MOSFET VDS(V) -30 MOSFET Product Sum

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Description The PPMT2305 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load s

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Description The PPM8PN30V25 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load s

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Description The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) -20

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PPMT30V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) -30 MOSFET Produc

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Description The PPM6N30V8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load

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Description The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) -20

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Description PPMT30V3A P-Channel MOSFET The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.  Trenc

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Description  Trench Power LV MOSFET technology  High Power and Current handing capability  Low Gate Charge MOSFET Product Summary VDS(V) -20 RDS

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