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PPMT30V3 - P-Channel MOSFET

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PPMT30V3
Manufacturer Prisemi
File Size 222.69 KB
Description P-Channel MOSFET
Datasheet download datasheet PPMT30V3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PPMT30V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) -30 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.058 @ VGS=-10V -3 0.075@ VGS=-4.5V G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistancea Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-On Fall Time Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate resistance Drain-Source Diode Forward Voltage Rev.06.