PPMT30V4
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（3）
VDS(V) -30
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
43 @ VGS=-10V -4.2
53@ VGS=-4.5V
G（1）
S（2）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Trans conductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-Off Delay Time
Symbol
Conditions
OFF CHARACTERISTICS
BVDSS
ID =-250μA,VGS=0V
IDSS
VDS =-24V,VGS=0V
IGSS
VDS =0V,VGS=±12V
VGS(th)
VDS =VGS, ID =-250μA
VGS=-10V, ID =-4.2A
RDS(ON)
VGS=-4.5V, ID =-4A
VGS=-2.5V, ID =-2A g FS
VGS=-5V, ID =-5A, TA=125℃
DYNAMIC PARAMETERS
CISS CDSS CRSS
VGS=0V, VDS =-15V, f=1MHz
SWITCHING PARAMETERS td(on) td(off)
VDD=-15V, VGS =-10V, RL=3.6Ω,...
