PPMT30V3A
Description
PPMT30V3A P-Channel MOSFET
The MOSFET provide the best bination of fast switching , low on-resistance and cost-effectiveness.
- Trench Power MV MOSFET technology
- Voltage controlled small signal switch
- Low input Capacitance
- Fast Switching Speed
- Low Input / Output Leakage
MOSFET Product Summary
VDS(V) -30
RDS(on)(mΩ) 50@VGS = -10V 72@VGS = -4.5V
ID(A) -3.0
Top View
D(3)
G(1)
Applications
- Battery operated systems
- Solid-state relays
- Direct logic-level interface：TTL/CMOS
S(2)
Circuit Diagram
D(3)
PT33A
Absolute maximum rating@25℃
Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current Total Power Dissipation1) Junction and Storage Temperature Range
G(1)
S(2)
Marking (Top View)
Symbol VDS VGS ID IDM PD
TJ,TSTG
Value -30 ±20 -3.0 -15 0.78
-55~+150
Units V V A A W ℃
Thermal Resistance
Parameter
Symbol
Min
Typ
Thermal Resistance, Junction-to-Case2)
RθJC...
