PPM8P30V8
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
D（5、6、7、8）
VDS(V) -30
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
20@ VGS=-10V 30@ VGS=-4.5V
-8
G（4）
S（1、2、3）
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage Static Drain-Source On-Resistance
Forward Tran conductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Symbol
Conditions
OFF CHARACTERISTICS
BVDSS
ID =-250μA,VGS=0V
IDSS VDS =-30V,VGS=0V
IGSS VDS =0V,VGS=±20V
On CHARACTERISTICS(Note 1)
VGS(th) RDS(ON)
VDS =VGS, ID =-250μA VGS=-10V, ID =-8A VGS=-4.5V, ID =-6A g FS VDS=-15V, ID =-9.1A
DYNAMIC PARAMETERS(Note 2)
CISS CDSS CRSS
VGS=0V, VDS =-15V, f=1.0MHz
SWITCHING PARAMETERS(Note...
