PPM8P40V8
Description
The PPM8P40V8 uses advanced trench technology to provide excellent RDS(on), low gate charge and operation with gate voltage as low as -4.5V. This device is suitable for use as a wide variety of application.
PPM8P40V8 P-Channel MOSFET
D（5、6、7、8）
VDS(V) -40
MOSFET Product Summary
RDS(on)(mΩ)
ID(A)
21@ VGS=-10V
-8
31@ VGS=-4.5V
G（4）
Absolute Maxinmum Ratings @25℃
Parameter
Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Drain Current-Continuous (TC=25℃) Drain Current-Continuous (TC=100℃) Drain Current-Continuous @Current-Pulse (Note1) Maximum Power Dissipation (TC=25℃) Maximum Power Dissipation (TC=100℃) Operating Junction and storage Temperature Range
Symbol
VDS VGS
ID IDM(pulse)
PD TJ,TSTG
S（1、2、3）
Value
-40 ±20 -8 -5 -32 3 1.2 -55 To 150
Unit
V V A A A W
W ℃
Thermal Characteristic
Parameter
Thermal Resistance, Junction-to-Ambient
Symbol
RθJA
Min.
Typ.
Max.
Units
℃/W
Electrical characteristics per line@25℃( unless otherwise...
