PPM8PN02R8
Description
The PPM8PN02R8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
VDS(V) -20
MOSFET Product Summary
RDS(on)(mΩ)(Typ) 5.6@ VGS = -4.5V 8@ VGS = -2.5V
ID(A) -68
Feature
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Applications
- PWM applications
- Load switch
- Power management
- DC-DC Converters
- Wireless Chargers
Absolute maximum rating@25℃
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous1) Pulsed Drain Current2)
TC=25℃ TC=100℃
Total Power Dissipation3)
Avalanche Current4)
Avalanche Energy4)
Thermal Resistance , Junction-to-Case5)
Thermal Resistance , Junction-to-Ambient5)
Junction and Storage Temperature Range
Rev.06.0
PPM8PN02R8 P-Channel MOSFET
Pin1 S S G S
DD DD PDFN3333-8L (Bottom View)
Circuit Diagram
P02R8 xxxx
Pin1 Marking (Top View)
Symbol VDS...
