PPM723T201E0
Description
The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) -20
MOSFET Product Summary
RDS(on)(Ω)
ID(m A)
0.45@ VGS=-4.5V
0.62@ VGS=-2.5V
-800
0.86@ VGS=-1.8V
PPM723T201E0 P-Channel MOSFET
D（3）
G（1） S（2）
Absolute maximum rating@25℃
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren(TJ=150℃)
Source current(Body diode)
Total power dissipation Channel temperature Range of storage temperature
Continuous Pulsed Continuous Pulsed
Thermal resistance
Parameter
Channel to ambient
Symbol
VDS VGS ID IDP IS ISP PD TCH TSTG
Value
-20 ±10 -800 -1200 -500 -1200 150 150 -55 to +150
Units
V V m A m A m W ℃ ℃
Symbol
Rth(ch-a)
Limits
Units
℃/W
Rev.06.9
.prisemi.
P-Channel MOSFET
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter...
