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PPMT3415R - P-Channel MOSFET

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PPMT3415R
Manufacturer Prisemi
File Size 372.21 KB
Description P-Channel MOSFET
Datasheet download datasheet PPMT3415R Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPMT3415R P-Channel MOSFET D（3） VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(A) 0.03 @ VGS=-4.5V -6 G（1） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation(Note 1) Avalanche Current(Note 3) Avalanche Energy(Note 3) Junction and Storage Temperature Range Thermal resistance Parameter Maximum Junction-to-Ambient (Note 1) Symbol VDS VGS ID IDM PD IAS EAS TJ,TSTG S（2） Value -20 ±10 -6 -30 1.8 10.3 26.7 -55 to +150 Units V V A A W A mJ ℃ Symbol RθJA Typ. 70 Units ℃/W Rev.06.0 1 www.prisemi.