PPMT32V4 - P-Channel MOSFET

Prisemi

General Description

The enhancement mode MOS is extremely high density cell and low on-resistance.

PPMT32V4 p-channel mosfet by Prisemi - Datasheet Preview

Datasheet Details

Part number	PPMT32V4
Manufacturer	Prisemi
File Size	222.76 KB
Description	P-Channel MOSFET
Datasheet	PPMT32V4 Datasheet

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Full PDF Text Transcription (Reference)

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Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPMT32V4 P-Channel MOSFET D（3） VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ID(A) 67 @ VGS=-4.5V -4.3 G（1） Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG S（2） Value -30 ±20 -4.3 -20 1.5 -55 to +150 Unit V V A A W ℃ Thermal resistance Parameter Thermal Resistance, Junction-to-Ambient Symbol RθJA Value 84 Unit ℃/W Rev.06.1 1 www.prisemi.