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PPM8PN30V25 - P-Channel MOSFET

General Description

The PPM8PN30V25 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

This device is suitable for use as a load switch or in PWM applications.

High Power and current

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Datasheet Details

Part number PPM8PN30V25
Manufacturer Prisemi
File Size 833.19 KB
Description P-Channel MOSFET
Datasheet download datasheet PPM8PN30V25 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The PPM8PN30V25 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ)(Typ) 11@ VGS = -10V 15@ VGS = -4.5V ID(A) -37 Feature  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Applications  PWM applications  Load switch  Power management  DC-DC Converters  Wireless Chargers Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current1) Total Power Dissipation Avalanche Current2) Avalanche Energy2) Thermal Resistance , Junction-case3) Thermal Resistance Junction-to-Ambient3) Junction and Storage Temperature Range Rev.