PPM8PN30V25
Description
The PPM8PN30V25 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load switch or in PWM applications.
VDS(V) -30
MOSFET Product Summary
RDS(on)(mΩ)(Typ) 11@ VGS = -10V 15@ VGS = -4.5V
ID(A) -37
Feature
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Applications
- PWM applications
- Load switch
- Power management
- DC-DC Converters
- Wireless Chargers
Absolute maximum rating@25℃
Rating Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current1) Total Power Dissipation Avalanche Current2) Avalanche Energy2) Thermal Resistance , Junction-case3) Thermal Resistance Junction-to-Ambient3) Junction and Storage Temperature Range
Rev.06.5
PPM8PN30V25 P-Channel MOSFET
Pin1 S S G S
D D DD PDFN3333-8L (Bottom View)
Circuit Diagram
3013M
YYWW
Pin1 Marking (Top View)
Symbol VDS VGS ID IDM PD IAS EAS RθJC RθJA
TJ,TSTG
Value...
