PPMT20V4A
Description
The MOSFET provide the best bination of fast switching , low on-resistance and cost-effectiveness.
- Trench Power MV MOSFET technology
- Voltage controlled small signal switch
- Low input Capacitance
- Fast Switching Speed
- Low Input / Output Leakage
MOSFET Product Summary
VDS(V) -20
RDS(on)(mΩ) 32@VGS = -4.5V 42@VGS = -2.5V
ID(A) -4.0
Applications
- Battery operated systems
- Solid-state relays
- Direct logic-level interface：TTL/CMOS
PPMT20V4A P-Channel MOSFET
Top View
D(3)
G(1)
S(2)
Circuit Diagram
D(3)
PT24A
G(1)
S(2)
Marking (Top View)
Absolute maximum rating@25℃
Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current
Rating
Total Power Dissipation
Junction and Storage Temperature Range
TA=25℃ TA=125℃
Symbol VDS VGS ID IDM
TJ,TSTG
Value -20 ±12 -4.0 -35 0.83 0.17
-55~+150
Units V V A...
