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SSM6K819R - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V drive (3) Low drain-source on-resistance : RDS(ON) = 25.8 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 20.9 mΩ (typ. ) (@VGS = 10 V) 3. Packaging and Internal Circuit SSM6K819R 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain TSOP6F 4. Orderable part number Orderable part number AEC-Q101 Note SSM6K819R,LF SSM6K819R,LXGF SSM6K819R,LXHF.
  • YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For mor.

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Datasheet Details

Part number SSM6K819R
Manufacturer Toshiba
File Size 455.93 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-channel MOS (U-MOS�-H) SSM6K819R 1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V drive (3) Low drain-source on-resistance : RDS(ON) = 25.8 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 20.9 mΩ (typ.) (@VGS = 10 V) 3. Packaging and Internal Circuit SSM6K819R 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain TSOP6F 4. Orderable part number Orderable part number AEC-Q101 Note SSM6K819R,LF SSM6K819R,LXGF SSM6K819R,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.
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