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SSM6K818R - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) AEC-Q101 qualified (Note 1) (2) 4.5-V drive (3) Low drain-source on-resistance : RDS(ON) = 8.0 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 6.5 mΩ (typ. ) (@VGS = 10 V) Note 1: For detail information, please contact our sales. 3. Packaging and Pin Assignment TSOP6F SSM6K818R 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain ©2018-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-09 2021-09-17 Rev.3.0 SSM6K818R 4. Absolute Maximum Ratings (Note) (Unle.

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Datasheet Details

Part number SSM6K818R
Manufacturer Toshiba
File Size 259.72 KB
Description Silicon N-Channel MOSFET
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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS�-H) SSM6K818R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Note 1) (2) 4.5-V drive (3) Low drain-source on-resistance : RDS(ON) = 8.0 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 6.5 mΩ (typ.) (@VGS = 10 V) Note 1: For detail information, please contact our sales. 3. Packaging and Pin Assignment TSOP6F SSM6K818R 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain ©2018-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2021-09 2021-09-17 Rev.3.0 SSM6K818R 4.
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