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SW2N60D - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-251 TO-252 TO-220F.
  • High ruggedness.
  • RDS(ON) (Max 4.5Ω)@VGS=10V.
  • Gate Charge (Typ 9nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 1 2 3 1 2 3 1 2 3 1. Gate 2. Drain 3. Source BVDSS : 600V ID : 2A RDS(ON) : 4.5Ω 2 General.

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Datasheet Details

Part number SW2N60D
Manufacturer SEMIPOWER
File Size 726.63 KB
Description MOSFET
Datasheet download datasheet SW2N60D Datasheet

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Full PDF Text Transcription

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SAMWIN SW2N60D N-channel I-PAK/D-PAK/TO220F MOSFET Features TO-251 TO-252 TO-220F ■ High ruggedness ■ RDS(ON) (Max 4.5Ω)@VGS=10V ■ Gate Charge (Typ 9nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 3 1 2 3 1 2 3 1. Gate 2. Drain 3. Source BVDSS : 600V ID : 2A RDS(ON) : 4.5Ω 2 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
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