Datasheet4U Logo Datasheet4U.com

SW2N65B - N-channel MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-220F.
  • High ruggedness.
  • RDS(ON) (Max 5.6 Ω)@VGS=10V.
  • Gate Charge (Typical 7.7nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General.

📥 Download Datasheet

Datasheet Details

Part number SW2N65B
Manufacturer SAMWIN
File Size 677.84 KB
Description N-channel MOSFET
Datasheet download datasheet SW2N65B Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SW2N60D MOSFET SEMIPOWER
SW2N10 MOSFET SEMIPOWER
SW2N70 MOSFET SEMIPOWER
SW201 Quad SPST JFET Analog Switches Analog Devices
SW201 Quad SPST JFET Analog Switches Precision Monolithics

Other Datasheets by SAMWIN

Part Number Description
SW2N65 N-channel MOSFET
SW2N60 power MOSFET
SW2N40DC N-channel MOSFET
SW20N50 N-channel Power MOSFET
SW20N60 N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
SAMWIN SW2N65B N-channel MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 5.6 Ω)@VGS=10V ■ Gate Charge (Typical 7.7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. BVDSS : 650V ID : 2.0A RDS(ON) : 5.
Published: |