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SAMWIN
General Description Features
zN-Channel MOSFET zBVDSS (Minimum) zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) : 600 V : 5.0 ohm : 2.0 A : 16 nc : 50 W
SW2N60
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor.