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SW2N10 - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max0.24Ω)@VGS=10V.
  • Gate Charge (Typical 13nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested SOT-23 3 2 1 1. Gate 2. Source 3. Drain General.

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Datasheet Details

Part number SW2N10
Manufacturer SEMIPOWER
File Size 419.29 KB
Description MOSFET
Datasheet download datasheet SW2N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW2N10 N-channel SOT-23 MOSFET Features ■ High ruggedness ■ RDS(ON) (Max0.24Ω)@VGS=10V ■ Gate Charge (Typical 13nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested SOT-23 3 2 1 1. Gate 2. Source 3. Drain General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 100V ID : 2A RDS(ON) :0.
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