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SW20N50U - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 0.27Ω)@VGS=10V.
  • Gate Charge (Typ 103 nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-3P 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW20N50U
Manufacturer SEMIPOWER
File Size 592.04 KB
Description MOSFET
Datasheet download datasheet SW20N50U Datasheet

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Full PDF Text Transcription

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SAMWIN SW20N50U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Typ 103 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS : 500V ID : 20A RDS(ON) : 0.
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