SW20N50U
Features
- High ruggedness
- RDS(ON) (Max 0.27Ω)@VGS=10V
- Gate Charge (Typ 103 n C)
- Improved dv/dt Capability
- 100% Avalanche Tested
TO-3P
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
BVDSS : 500V ID : 20A RDS(ON) : 0.27Ω
Order Codes
Item 1
Sales Type SWW 20N50
Marking SW20N50U
Package TO-3P
Packaging TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS Drain to Source Voltage
Continuous Drain Current (@TC=25o C) Continuous Drain Current (@TC=100o C)
IDM Drain current pulsed
VGS Gate to Source...
