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SW20N60U - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-3P.
  • High ruggedness.
  • RDS(ON) (Max0.45Ω)@VGS=10V.
  • Gate Charge (Typical 108nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW20N60U
Manufacturer SEMIPOWER
File Size 636.73 KB
Description MOSFET
Datasheet download datasheet SW20N60U Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW20N60U N-channel TO-3P MOSFET Features TO-3P ■ High ruggedness ■ RDS(ON) (Max0.45Ω)@VGS=10V ■ Gate Charge (Typical 108nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 600V ID : 20A RDS(ON) :0.
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