SW20N60U
Features
TO-3P
- High ruggedness
- RDS(ON) (Max0.45Ω)@VGS=10V
- Gate Charge (Typical 108n C)
- Improved dv/dt Capability
- 100% Avalanche Tested
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 600V ID : 20A RDS(ON) :0.45Ω
Order Codes
Item 1
Sales Type SW W 20N60
Marking SW20N60U
Package TO-3P
Packaging TUBE
Absolute maximum ratings
Symbol VDSS
IDM VGS EAS EAR dv/dt
TSTG, TJ
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25o C) Continuous Drain Current (@TC=100o C) Drain current pulsed
(note 1)
Gate to Source...
