SW20N65K2
Features
TO-220F
- High ruggedness
- Low RDS(ON) (Typ 0.15Ω)@VGS=10V
- Low Gate Charge (Typ 37n C)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application: Charger, LED, PC Power
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General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes
BVDSS : 650V
: 20A
RDS(ON) : 0.15Ω
Item
Sales Type
Marking
Package
Packaging
SW F 20N65K2
TO-220F
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
IDM VGS EAS EAR dv/dt
Drain to source voltage Continuous drain current (@TC=25o C) Continuous drain current (@TC=100o C) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy MOSFET dv/dt ruggedness (@VDS=0~400V)
(note...
