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SW20N65K2 - N-channel Enhanced mode TO-220F MOSFET

Description

1.

Gate 2.

Drain 3.

Features

  • TO-220F.
  • High ruggedness.
  • Low RDS(ON) (Typ 0.15Ω)@VGS=10V.
  • Low Gate Charge (Typ 37nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW20N65K2
Manufacturer SEMIPOWER
File Size 611.82 KB
Description N-channel Enhanced mode TO-220F MOSFET
Datasheet download datasheet SW20N65K2 Datasheet

Full PDF Text Transcription

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SW20N65K2 N-channel Enhanced mode TO-220F MOSFET Features TO-220F ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 0.15Ω)@VGS=10V ⚫ Low Gate Charge (Typ 37nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫ Application: Charger, LED, PC Power 1 23 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 650V ID : 20A RDS(ON) : 0.
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